CTLDM8120-M832DS TR

CTLDM8120-M832DS SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8120-M832DS is an Enhancement-mode Dual P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE: CFVS TLM832DS CASE FEATURES: • Switching Circuits • DC-DC Converters • Battery powered portable devices • ESD protection up to 2kV • Low rDS(ON) (0.24Ω MAX @ VGS=1.8V) • High current (ID=0.95A) • Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current, t